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ProduktHersteller/DCInfoMengeDatum 
0,047UF-10%-X7R-50V-0805 SAMSUNGCapacitor, smd kerko200000 2000 send RFQ
0603-100NF-20%-16V SAMSUNGCapacitor/SMD, Kerko, SMD, 0603, 100nF, 20% oder besser,, 16 V oder höher, any. X7R100000 2000 send RFQ
0805/5%/10KOHM SAMSUNG 15000 2000 send RFQ
0805-1%-147OHM SAMSUNGResistor, chip widerstand SMD0 2000 send RFQ
0805-1%-464OHM SAMSUNGResistor, chip widerstand smd0 2000 send RFQ
0805-100OHM-5%-1/8WATT SAMSUNGResistor, kohleschichtwiderstand10000 2000 send RFQ
1µF;16V;BF:A; SAMSUNGCapacitor, Tantal10000 2000 send RFQ
100NF/-20%+80%/-16V-Y5V-0402 SAMSUNG 4000000 2013 send RFQ
100PF-5%-COG-50V-0805 SAMSUNGCapacitor, smd kerko250000 2000 send RFQ
2,2µF;16V;BF:B SAMSUNGCapacitor, tantal100000 2000 send RFQ
22µF;+-20%;16V;BAUFORM:C SAMSUNGCapacitor, tantal60000 2000 send RFQ
22µF;6,3V;BF:B SAMSUNGCapacitor, Tantal10000 2000 send RFQ
270PF-5%-COG-50V-0805 SAMSUNGCapacitor, smd kerko100000 2000 send RFQ
3,3NF;50V;10%;0805 SAMSUNGCapacitor, Kerko4000000 2000 send RFQ
4,7UF-25V-BF:B-20% SAMSUNG 200000 2000 send RFQ
470PF-10%-X7R-50V-0805 SAMSUNGCapacitor, smd kerko1000000 2000 send RFQ
68µF;6,3V;BF:B; SAMSUNGCapacitor, tantal10000 2000 send RFQ
82NF,0805X7R10%50V SAMSUNG 4000 2007 send RFQ
B37931-K5103-K60 SAMSUNGCapacitor, kerko smd 0603, 50v, 10%-X7R, 10nf16000 2000 send RFQ
BUZ90 SAMSUNGTransistor500 2000 send RFQ
CESMS1H472M2535TA SAMSUNG 530 2001 send RFQ
CEUSL1V331M1012AD SAMSUNG 1000 2002 send RFQ
CIH05T4N7SNC SAMSUNG 30000 2011 send RFQ
CL03A473KQ3NNNC SAMSUNG 100000 2018 send RFQ
CL05A105KO5NNNC SAMSUNGCapacitor, 1U/ 16V X5R K 040210000 2009 send RFQ
CL05A105KO5NNNC SAMSUNGCapacitor, 1U/ 16V X5R K 040210000 2009 send RFQ
CL05A105KO5NNNC SAMSUNGCapacitor, 1U/ 16V X5R K 040240000 2010 send RFQ
CL05A105KO5NNNC SAMSUNGCapacitor, 1U/ 16V X5R K 040210000 2010 send RFQ
CL05A106MQ5NUNC SAMSUNG 20000 2013 send RFQ
CL05B102KB5NNNC SAMSUNG-150000 2018 send RFQ
CL05B102KB5NNNC SAMSUNG-2000000 2019 send RFQ
CL05B102KB5NNNC SAMSUNG-2000000 2019 send RFQ
CL05B102KB5NNNC SAMSUNG-2000000 2019 send RFQ
CL05B103KB5NNNC SAMSUNG 800000 2018 send RFQ
CL05B104KO5NNND SAMSUNGCapacitor900000 2018 send RFQ
CL05B104KO5VPNC SAMSUNG 20000 2018 send RFQ
CL05B104KO5VPNC SAMSUNG 10000 2018 send RFQ
CL05B104KO5VPNC SAMSUNG 500000 2018 send RFQ
CL05B153KB5VPNC SAMSUNG 200000 2018 send RFQ
CL05B153KB5VPNC SAMSUNG 100000 2018 send RFQ
CL05B222KB5VPNC SAMSUNG 1000000 2019 send RFQ
CL05B333JO5NNNC SAMSUNGCapacitor, 33nf 0402 X7R 16V 5%9637 2015 send RFQ
CL05B472KB5VPNC SAMSUNG 20000 2018 send RFQ
CL05C0R5BB5ANNC SAMSUNG 10000 2010 send RFQ
CL05C471JB5NNNC SAMSUNGCapacitor50000 2018 send RFQ
CL05C4R7BB5NNNC SAMSUNGCapacitor, 4,7pF10000 2010 send RFQ
CL05C8R2BB5NNNC SAMSUNG 100000 2018 send RFQ
CL10A105KA8NNNC SAMSUNG 40000 2018 send RFQ
CL10A105KA8NNNC SAMSUNG 120000 2018 send RFQ
CL10A105KA8NNNC SAMSUNG 400000 2018 send RFQ
CL10A105KA8NNNC SAMSUNG 800000 2019 send RFQ
CL10A105KP8NNNC SAMSUNG-120000 2017 send RFQ
CL10A105MP6NXNC SAMSUNGCapacitor, -8000 2012 send RFQ
CL10A106KQ8NNNC SAMSUNG 3900 2009 send RFQ
CL10A106MO8NQNC SAMSUNG 16000 2018 send RFQ
CL10B102KB85PNC SAMSUNG-104000 2018 send RFQ
CL10B102KB85PNC SAMSUNG-104000 2018 send RFQ
CL10B102KB8WPNC SAMSUNG-, Automotive3870 2018 send RFQ
CL10B103KBNC SAMSUNG 1000000 2000 send RFQ
CL10B103KBND SAMSUNG 2000000 2000 send RFQ
CL10B103KC84PE SAMSUNG-, Automotive1616 2018 send RFQ
CL10B104JB8NNNC SAMSUNG 364000 2017 send RFQ
CL10B104KANC SAMSUNGCapacitor, -52000 2003 send RFQ
CL10B104KANC SAMSUNGCapacitor, -40000 2003 send RFQ
CL10B104KANC SAMSUNGCapacitor, -92000 2003 send RFQ
CL10B104KANC SAMSUNGCapacitor, -200000 2003 send RFQ
CL10B104KANC SAMSUNGCapacitor, -200000 2003 send RFQ
CL10B104KB85PNC SAMSUNGCapacitor, -, Automotive300000 2011 send RFQ
CL10B104KB8NNNC SAMSUNGCapacitor40000 2009 send RFQ
CL10B104KB8NNNC SAMSUNGCapacitor2000000 2018 send RFQ
CL10B104KB8NNNC SAMSUNGCapacitor100000 2018 send RFQ
CL10B104KB8NNNC SAMSUNGCapacitor100000 2018 send RFQ
CL10B104KB8WPNC SAMSUNG-, Automotive28000 2018 send RFQ
CL10B104KBNC SAMSUNG 200000 2003 send RFQ
CL10B104KO8NNNC SAMSUNG 250000 2018 send RFQ
CL10B104KONC SAMSUNG 1500000 2000 send RFQ
CL10B104KOND SAMSUNG 100000 2000 send RFQ
CL10B104MONC SAMSUNG 1000000 2000 send RFQ
CL10B105KA8NNNC SAMSUNG 52000 2018 send RFQ
CL10B105KA8NNNC SAMSUNG 1200000 2018 send RFQ
CL10B105KA8NNNC SAMSUNG 200000 2018 send RFQ
CL10B105KA8NNNC SAMSUNG 200000 2018 send RFQ
CL10B105KA8NNNC SAMSUNG 200000 2018 send RFQ
CL10B124KONC SAMSUNG 570000 2007 send RFQ
CL10B153JB8NNNC SAMSUNG-28000 2017 send RFQ
CL10B153JB8NNNC SAMSUNG-40000 2017 send RFQ
CL10B153JB8NNNC SAMSUNG-68000 2017 send RFQ
CL10B153JB8NNNC SAMSUNG-56000 2017 send RFQ
CL10B153KB8NNNC SAMSUNGCapacitor172000 2016 send RFQ
CL10B153KB8NNNC SAMSUNGCapacitor172000 2016 send RFQ
CL10B153KB8NNNC SAMSUNGCapacitor128000 2016 send RFQ
CL10B153KB8NNNC SAMSUNGCapacitor300000 2016 send RFQ
CL10B183KBNC SAMSUNG 300000 2003 send RFQ
CL10B222KB8NNNC SAMSUNG 160000 2018 send RFQ
CL10B223KB85PNC SAMSUNG 1200000 2010 send RFQ
CL10B224KB8NNNC SAMSUNGCapacitor44000 2017 send RFQ
CL10B224KB8NNNC SAMSUNGCapacitor44000 2017 send RFQ
CL10B224KB8NNNC SAMSUNGCapacitor44000 2018 send RFQ
CL10B224KB8NNNC SAMSUNGCapacitor44000 2018 send RFQ
CL10B224KB8VPNC SAMSUNG 500000 2019 send RFQ
CL10B224KO8VPNC SAMSUNGCapacitor, Automotive8000 2016 send RFQ
CL10B332KB8WPNL SAMSUNG 4200000 2016 send RFQ
CL10B333KB85PNC SAMSUNG 96000 2009 send RFQ
CL10B333KB85PNC SAMSUNG 96000 2009 send RFQ
CL10B333KB85PNC SAMSUNG 88000 2009 send RFQ
CL10B472KB8NNNC SAMSUNGCapacitor, -24000 2018 send RFQ
CL10B472KB8NNNC SAMSUNGCapacitor, -100000 2018 send RFQ
CL10B472KB8NNNC SAMSUNGCapacitor, -24000 2018 send RFQ
CL10B473KBNC SAMSUNG 16000 2005 send RFQ
CL10B474K08NNNC SAMSUNGCapacitor, 0603 470nF 16V 10%200000 2005 send RFQ
CL10B474KA84PNC SAMSUNGCapacitor/SMD, -12000 2011 send RFQ
CL10B474KA84PNC SAMSUNGCapacitor/SMD, -12000 2011 send RFQ
CL10B474KA84PNC SAMSUNGCapacitor/SMD, -12000 2017 send RFQ
CL10B474KA84PNC SAMSUNGCapacitor/SMD, -3000 2017 send RFQ
CL10C010BB8ANND SAMSUNG 30000 2009 send RFQ
CL10C100CB81PNC SAMSUNG 820000 2019 send RFQ
CL10C100CB81PNC SAMSUNG 820000 2019 send RFQ
CL10C101FB81PNC SAMSUNG 44000 2019 send RFQ
CL10C101JB81PNC SAMSUNG 500000 2009 send RFQ
CL10C120FB8NNNC SAMSUNG 40000 2010 send RFQ
CL10C121JB8NNNC SAMSUNG 68000 2006 send RFQ
CL10C151JB8NNNC SAMSUNG-4130000 2017 send RFQ
CL10C1R5BB8NNNC SAMSUNGCapacitor, -40000 2019 send RFQ
CL10C1R5BB8NNNC SAMSUNGCapacitor, -40000 2019 send RFQ
CL10C220JB8NNND SAMSUNG 20000 2010 send RFQ
CL10C220JB8NNND SAMSUNG 1000000 2010 send RFQ
CL10C271JBNC SAMSUNG 100000 2003 send RFQ
CL10C271JBNC SAMSUNG 40000 2003 send RFQ
CL10C271JBNC SAMSUNG 100000 2003 send RFQ
CL10C330JB8NNNC SAMSUNGCapacitor, -40000 2018 send RFQ
CL10C470FBNC SAMSUNG 16000 2000 send RFQ
CL10C471JB8NNNC SAMSUNGCapacitor40000 2018 send RFQ
CL10C471JB8NNNC SAMSUNGCapacitor44000 2018 send RFQ
CL10C471JB8NNNC SAMSUNGCapacitor40000 2018 send RFQ
CL10C471JBND SAMSUNGCapacitor, kerko smd 0603, 470pf, 50v, cog-5%0 2000 send RFQ
CL10C5R6CB8NNNC SAMSUNG 200000 2012 send RFQ
CL10C5R6CB8NNNC SAMSUNG 200000 2012 send RFQ
CL10C820JC81PNC SAMSUNG 24000 2010 send RFQ
CL10C820JC81PNC SAMSUNG 4000 2011 send RFQ
CL10C820JC81PNC SAMSUNG 20000 2011 send RFQ
CL21A106KAFN3NE SAMSUNG 110000 2017 send RFQ
CL21A475KACLRNC SAMSUNG 48000 2018 send RFQ
CL21A475KACLRNC SAMSUNG 182000 2018 send RFQ
CL21A475KAQNNNE SAMSUNG 134000 2018 send RFQ
CL21A475KAQNNNE SAMSUNG 324000 2018 send RFQ
CL21B102KB65PNC SAMSUNGCapacitor/SMD, -, Automotive80000 2012 send RFQ
CL21B102KBANNND SAMSUNGCapacitor, 0,001 uF, 10%, 50 V, smd4000000 2015 send RFQ
CL21B102KBANNND SAMSUNGCapacitor, 0,001 uF, 10%, 50 V, smd4000000 2015 send RFQ
CL21B102KBNC SAMSUNG 200000 2000 send RFQ
CL21B102KBND SAMSUNG 440000 2000 send RFQ
CL21B102KBND SAMSUNG 440000 2000 send RFQ
CL21B103KBNC SAMSUNG 180000 2000 send RFQ
CL21B103KBNC SAMSUNG 180000 2000 send RFQ
CL21B103KC65PNC SAMSUNG 72000 2014 send RFQ
CL21B103KC65PNC SAMSUNG 72000 2014 send RFQ
CL21B103MBNC SAMSUNG 20000 2000 send RFQ
CL21B104KANE SAMSUNG 1100000 2000 send RFQ
CL21B104KBAC SAMSUNGCapacitor, SMD KERKO 0805, 0,1 uF bzw 100 nF, 50V, X7R1200000 2000 send RFQ
CL21B104KBAC SAMSUNGCapacitor, SMD KERKO 0805, 0,1 uF bzw 100 nF, 50V, X7R52000 2000 send RFQ
CL21B104KBAC SAMSUNGCapacitor, SMD KERKO 0805, 0,1 uF bzw 100 nF, 50V, X7R1000000 2000 send RFQ
CL21B104KBAC SAMSUNGCapacitor, SMD KERKO 0805, 0,1 uF bzw 100 nF, 50V, X7R800000 2000 send RFQ
CL21B104KBAC SAMSUNGCapacitor, SMD KERKO 0805, 0,1 uF bzw 100 nF, 50V, X7R1000000 2000 send RFQ
CL21B104KBCNNNC SAMSUNG-1000000 2018 send RFQ
CL21B104KBCNNND SAMSUNGCapacitor, -, -8750 2010 send RFQ
CL21B104KBCNNND SAMSUNGCapacitor, -, -10000 2010 send RFQ
CL21B104KBNC SAMSUNG 500000 2000 send RFQ
CL21B104KBND SAMSUNGCapacitor, KERKO X7R SMD, 10%, 100nF, 50V450000 2000 send RFQ
CL21B104KBND SAMSUNGCapacitor, KERKO X7R SMD, 10%, 100nF, 50V500000 2000 send RFQ
CL21B104KBND SAMSUNGCapacitor, KERKO X7R SMD, 10%, 100nF, 50V2100000 2000 send RFQ
CL21B104KCC5PNC SAMSUNGCapacitor/SMD, 100nF, 10%, 100V, Keramik32000 2014 send RFQ
CL21B104KCFSFNE SAMSUNG 54000 2014 send RFQ
CL21B105KAFNNNE SAMSUNGCapacitor50000 2018 send RFQ
CL21B105KAFNNNE SAMSUNGCapacitor50000 2018 send RFQ
CL21B105KBFNNNE SAMSUNG 152000 2018 send RFQ
CL21B105KBFNNNE SAMSUNG 72000 2018 send RFQ
CL21B105KBFNNNE SAMSUNG 200000 2018 send RFQ
CL21B105KBFNNNE SAMSUNG 200000 2018 send RFQ
CL21B105KBFNNNE SAMSUNG 200000 2018 send RFQ
CL21B105KBFVPNE SAMSUNG-44000 2018 send RFQ
CL21B105KOF4PNG SAMSUNG 60000 2011 send RFQ
CL21B105KOF4PNG SAMSUNG 60000 2011 send RFQ
CL21B122KBNC SAMSUNG 90000 2003 send RFQ
CL21B153KBANNNC SAMSUNG-8000 2010 send RFQ
CL21B153KCCNNNC SAMSUNGCapacitor, Automotive152000 2019 send RFQ
CL21B153KCCNNNC SAMSUNGCapacitor, Automotive152000 2019 send RFQ
CL21B154KBFNNNE SAMSUNG 26000 2005 send RFQ
CL21B155KAFNNNE SAMSUNG-20000 2018 send RFQ
CL21B224KANC SAMSUNG 32000 2000 send RFQ
CL21B224KANE SAMSUNG 60000 2000 send RFQ
CL21B224KANE SAMSUNG 26000 2000 send RFQ
CL21B224KBF4PNE SAMSUNG 4000 2014 send RFQ
CL21B224KBF4PNG SAMSUNG 18000 2014 send RFQ
CL21B224KBFNNNG SAMSUNG 900000 2016 send RFQ
CL21B224KBFVPNF SAMSUNG 90000 2019 send RFQ
CL21B332KBNC SAMSUNG 112000 2000 send RFQ
CL21B332KBNC SAMSUNG 4000 2000 send RFQ
CL21B472KB65PND SAMSUNGCapacitor, Automotive30000 2018 send RFQ
CL21B472KBANNNC SAMSUNG 40000 2009 send RFQ
CL21B473KBNC SAMSUNG 52000 2000 send RFQ
CL21B473KBNC SAMSUNG 52000 2000 send RFQ
CL21B473KBNC SAMSUNG 16000 2000 send RFQ
CL21B473KCFNNNE SAMSUNG 474000 2017 send RFQ
CL21B473KCFNNNE SAMSUNG 474000 2017 send RFQ
CL21B473KCFNNNE SAMSUNG 474000 2017 send RFQ
CL21B474K0NE SAMSUNG 3000000 2000 send RFQ
CL21B474KAF4PNG SAMSUNG 300000 2012 send RFQ
CL21B474KAFNNNF SAMSUNG 2000000 2013 send RFQ
CL21B474KAFNNNG SAMSUNGCapacitor, -534000 2017 send RFQ
CL21B474KAFNNNG SAMSUNGCapacitor, -111000 2018 send RFQ
CL21B474KBF4PNG SAMSUNG 3000 2018 send RFQ
CL21B474KBFNNNE SAMSUNGCapacitor, -180000 2018 send RFQ
CL21B475KPFNNNE SAMSUNG 32000 2017 send RFQ
CL21B475KPFNNNE SAMSUNG 24000 2017 send RFQ
CL21B681MBNC SAMSUNG 350000 2000 send RFQ
CL21B683KBAC SAMSUNG 60000 2000 send RFQ
CL21B683KBCNNNC SAMSUNGCapacitor, Automotive60000 2016 send RFQ
CL21B684KONE SAMSUNG 500000 2003 send RFQ
CL21C100DBNC SAMSUNG 68000 2000 send RFQ
CL21C100JB61PNC SAMSUNG 72000 2012 send RFQ
CL21C100JBND SAMSUNG 2000000 2000 send RFQ
CL21C100JBND SAMSUNG 2000000 2000 send RFQ
CL21C101JBNC SAMSUNG 20000 2000 send RFQ
CL21C101JBNC SAMSUNG 20000 2000 send RFQ
CL21C101JBNC SAMSUNG 8000 2001 send RFQ
CL21C181JBNC SAMSUNG 8000 2000 send RFQ
CL21C222JBFNNNE SAMSUNG-136000 2019 send RFQ
CL21C470JB61PNC SAMSUNG 36000 2018 send RFQ
CL21C470JB61PNC SAMSUNG 4000 2018 send RFQ
CL21C470JB61PNC SAMSUNG 8000 2018 send RFQ
CL21C470JB61PNC SAMSUNG 28000 2018 send RFQ
CL21C471JBNC SAMSUNG 200000 2000 send RFQ
CL21C472JBANNNC SAMSUNG 300000 2005 send RFQ
CL21C560JBNC SAMSUNG 50000 2000 send RFQ
CL21C560JBNC SAMSUNG 180000 2000 send RFQ
CL21C681FBNC SAMSUNG 40000 2000 send RFQ
CL21F684ZONC SAMSUNGCapacitor, 680nF, 20%, 16V10000 2005 send RFQ
CL21Y106KPQVPNE SAMSUNGCapacitor, Automotive462000 2019 send RFQ
CL31A106KOHNNNE SAMSUNG 150000 2009 send RFQ
CL31A106KQHNNNE SAMSUNG 50000 2005 send RFQ
CL31A107MPHNNNE SAMSUNG 10000 2018 send RFQ
CL31B104JBNC SAMSUNG 24000 2003 send RFQ
CL31B104KBCNNNC SAMSUNGCapacitor12000 2009 send RFQ
CL31B104KBCNNNC SAMSUNGCapacitor200000 2018 send RFQ
CL31B105KBHNNNE SAMSUNGCapacitor, KC 1,0 u / 1206 / 10% / 50V / X7R, -, -, -22000 2009 send RFQ
CL31B105KONE SAMSUNG 12000 2000 send RFQ
CL31B106KOHNNNE SAMSUNG 116000 2018 send RFQ
CL31B106KOHNNNE SAMSUNG 70000 2018 send RFQ
CL31B106KOHNNNE SAMSUNG 26000 2018 send RFQ
CL31B223KDCNNNC SAMSUNG 23900 2005 send RFQ
CL31B223KGNE SAMSUNG 12000 2006 send RFQ
CL31B224KBFNNNE SAMSUNGCapacitor, 220 nF / 1206 / 10% / 50V / X7R, -, -, -100000 2010 send RFQ
CL31B224KBFNNNE SAMSUNGCapacitor, 220 nF / 1206 / 10% / 50V / X7R, -, -, -1000000 2018 send RFQ
CL31B224KBNE SAMSUNG 38000 2000 send RFQ
CL31B224KBNE SAMSUNG 4000 2000 send RFQ
CL31B224KBNE SAMSUNG 16000 2000 send RFQ
CL31B225KBH4PNE SAMSUNG 12000 2014 send RFQ
CL31B225KBH4PNE SAMSUNG 200000 2018 send RFQ
CL31B226KPHNNNE SAMSUNG 96000 2014 send RFQ
CL31B226KQHNNNE SAMSUNG 122000 2019 send RFQ
CL31B334KANC SAMSUNG 22000 2000 send RFQ
CL31B334KBFNNNE SAMSUNG 30000 2009 send RFQ
CL31B334KBFNNNE SAMSUNG 80000 2010 send RFQ
CL31B472KBCNNNC SAMSUNG 300000 2017 send RFQ
CL31B474KANE SAMSUNG 84000 2003 send RFQ
CL31B474KBHNNNE SAMSUNG 12000 2010 send RFQ
CL31B474KBHNNNE SAMSUNG 12000 2010 send RFQ
CL31B474KBHNNNE SAMSUNG 310000 2010 send RFQ
CL31B475KAHNNNE SAMSUNG 2000000 2017 send RFQ
CL31B475KBHNNFE SAMSUNG 8000 2017 send RFQ
CL31B475KBHNNFE SAMSUNG 2000 2017 send RFQ
CL31B475KBHNNFE SAMSUNG 14000 2017 send RFQ
CL31B475KBHNNFE SAMSUNG 10000 2017 send RFQ
CL31B475KBHNNNE SAMSUNG 430000 2018 send RFQ
CL31B475KBHNNNE SAMSUNG 430000 2018 send RFQ
CL31B475KBHNNNE SAMSUNG 610000 2018 send RFQ
CL31B475KBHNNNE SAMSUNG 160000 2018 send RFQ
CL31B475KBHVPNE SAMSUNGCapacitor, Automotive128000 2018 send RFQ
CL31B475KBHVPNE SAMSUNGCapacitor, Automotive128000 2018 send RFQ
CL31B475KBHVPNE SAMSUNGCapacitor, Automotive20000 2018 send RFQ
CL31B475KBHVPNE SAMSUNGCapacitor, Automotive20000 2018 send RFQ
CL31B475KBHVPNE SAMSUNGCapacitor, Automotive108000 2017 send RFQ
CL31B475KPNE SAMSUNG 20000 2002 send RFQ
CL31B475KPNE SAMSUNG 10000 2004 send RFQ
CL31C101JGFNNNE SAMSUNG-300000 2016 send RFQ
CL31C102JBNC SAMSUNG 160000 2000 send RFQ
CL31C220JBNC SAMSUNG 20000 2001 send RFQ
CL31C221JBCNNNC SAMSUNGCapacitor, 220pF, +-5%, 50V, -120000 2010 send RFQ
CL31C222GBNE SAMSUNG 10000 2000 send RFQ
CL31C222JHHNNNE SAMSUNG 100000 2017 send RFQ
CL31C470JIFNFNE SAMSUNG 42000 2018 send RFQ
CL31C471JGFNFNE SAMSUNG 2000 2018 send RFQ
CL31X226KAHN3NE SAMSUNG 460000 2017 send RFQ
CL31X226KAHN3NE SAMSUNG 100 2017 send RFQ
CL31X226KAHN3NE SAMSUNG 460000 2017 send RFQ
CL32A107MQVNNNE SAMSUNG-16000 2009 send RFQ
CL32B104KBNC SAMSUNG 300000 2000 send RFQ
CL32B104KBNC SAMSUNG 300000 2000 send RFQ
CL32B104KBNE SAMSUNG 50000 2000 send RFQ
CL32B106KBJNNWE SAMSUNGCapacitor, -10000 2018 send RFQ
CL32B475KBUYNNE SAMSUNGCapacitor, KC 4,7 u / 1210 / 10% / 50V / X7R, -, -, -120000 2019 send RFQ
CL32B475KBUYNNE SAMSUNGCapacitor, KC 4,7 u / 1210 / 10% / 50V / X7R, -, -, -176000 2019 send RFQ
CL32B476KPJNNWE SAMSUNG 3000 2018 send RFQ
CL43B474KENE SAMSUNG 8000 2004 send RFQ
CO21C102JBND SAMSUNG 380000 2000 send RFQ
CXK58257AP-10L SAMSUNG 1000 2005 send RFQ
EJ-FT810MBEGDE SAMSUNG<other>, -25 2016 send RFQ
HM6264BLP-10L SAMSUNG-, obsolete8071 2001 send RFQ
IRF540 SAMSUNGOptokoppler5000 2000 send RFQ
IRF630 SAMSUNG 1000 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt4795 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt18000 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt6000 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt6000 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt1902 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt4795 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt18000 2000 send RFQ
IRF840A SAMSUNGTransistor, power mos transistor, maß L 1 bis max. 4 mm, gehäuse und VPE unbekannt6000 2000 send RFQ
IRF840AS SAMSUNG 18000 2000 send RFQ
IRF840AS SAMSUNG 18000 2000 send RFQ
IRFR220 SAMSUNGTrans.2000 1998 send RFQ
IRFS450 SAMSUNG 11000 2003 send RFQ
IRFZ44A SAMSUNG 5000 2000 send RFQ
K1S321611C-FI70 SAMSUNG 160 2005 send RFQ
K4B4G1646E-BYK0 SAMSUNG 18769 2017 send RFQ
K4D263238K-UC50 SAMSUNGIC, 128MB / 500PIN, obsolete89 2011 send RFQ
K4E151612D-TL50 SAMSUNG 3960 2006 send RFQ
K4E160812D-FC50 SAMSUNG-, EDO-Ram480 2001 send RFQ
K4E160812D-FC50 SAMSUNG-, EDO-Ram320 2001 send RFQ
K4E160812D-FC50000 SAMSUNG 2000 2001 send RFQ
K4E171612DTL60 SAMSUNG-, obsolete1440 2002 send RFQ
K4E171612D-TL60 SAMSUNGThyrystor, D-Ram, obsolete25000 2003 send RFQ
K4E171612D-TL60 SAMSUNGThyrystor, D-Ram, obsolete300 2005 send RFQ
K4E641612D-TC50 SAMSUNG 2880 2000 send RFQ
K4E641612D-TC60000 SAMSUNGFlash RAM160 2000 send RFQ
K4E660412D-TC50 SAMSUNGSRAM800 2003 send RFQ
K4E660412D-TC50 SAMSUNGSRAM800 2003 send RFQ
K4E660412D-TC50 SAMSUNGSRAM800 2003 send RFQ
K4E660412D-TC50 SAMSUNGSRAM800 2003 send RFQ
K4E660412D-TC60 SAMSUNG 760 2003 send RFQ
K4E660412D-TC60 SAMSUNG 760 2003 send RFQ
K4F151611D-JC60 SAMSUNG-656 2000 send RFQ
K4F151611D-JC60 SAMSUNG-20 2016 send RFQ
K4F151611D-JC60T SAMSUNG 580 2003 send RFQ
K4F641612D-TC50 SAMSUNGActive, Gehäuse TSOP50/400200 2005 send RFQ
K4H281638E-TCB3 SAMSUNG 5000 2005 send RFQ
K4H281638E-TCB3 SAMSUNG 93 2005 send RFQ
K4H511638B-TCB3000 SAMSUNG 180 2005 send RFQ
K4H511638B-UCB3000 SAMSUNG 1920 2005 send RFQ
K4H511638B-ZCB3 SAMSUNG 8436 2008 send RFQ
K4H511638C-ZCB3000 SAMSUNG 1050 2008 send RFQ
K4H561638F-UCCC SAMSUNG 2880 2006 send RFQ
K4H561638F-UCCC SAMSUNG 2880 2006 send RFQ
K4H561638F-UCCC SAMSUNG 2880 2006 send RFQ
K4H561638F-UCCC SAMSUNG 2880 2006 send RFQ
K4H561638F-UCCC SAMSUNG 2880 2006 send RFQ
K4H561638J-LCB3T SAMSUNGMemory, DDR SDRAM 66Pin 167MHz10000 2010 send RFQ
K4H561638N-LCCC SAMSUNG 1920 2010 send RFQ
K4H561638N-LCCC SAMSUNG 1920 2010 send RFQ
K4H561638N-LCCC SAMSUNG 2000 2010 send RFQ
K4H561638N-LCCC SAMSUNG 1920 2010 send RFQ
K4I641612D-TC600 SAMSUNG 1600 2001 send RFQ
K4M28163LH-BG75 SAMSUNGIC, obsolete2000 2011 send RFQ
K4M28163LH-BG75 SAMSUNGIC, obsolete2000 2011 send RFQ
K4M28163LH-BG75 SAMSUNGIC, obsolete1800 2012 send RFQ
K4M28163LH-BG75 SAMSUNGIC, obsolete1800 2012 send RFQ
K4M28163PH-BG75 SAMSUNG 1280 2008 send RFQ
K4M283233H-HN75 SAMSUNG-115 2016 send RFQ
K4M511633CBL75 SAMSUNG-, obsolete183 2013 send RFQ
K4M511633CBL75 SAMSUNG-, obsolete830 2013 send RFQ
K4M511633C-BL75 SAMSUNG-, obsolete2764 2008 send RFQ
K4M511633C-BL75 SAMSUNG-, obsolete2764 2008 send RFQ
K4M511633C-BL75 SAMSUNG-, obsolete2764 2008 send RFQ
K4M51163PE-BG75 SAMSUNG 1925 2008 send RFQ
K4M51163PE-BG75 SAMSUNG 2000 2008 send RFQ
K4M51163PE-BG75 SAMSUNG 2000 2008 send RFQ
K4M51163PE-BG75 SAMSUNG 356 2008 send RFQ
K4M51323P-G-HG75 SAMSUNG 1129 2011 send RFQ
K4M51323PG-HG75 SAMSUNG 10080 2011 send RFQ
K4M51323P-I-HG75 SAMSUNG 15000 2011 send RFQ
K4M51323P-I-HG75000 SAMSUNG 1547 2011 send RFQ
K4P2G324ED-AGC1000 SAMSUNG 149 2013 send RFQ
K4P4G324EB-AGC1000 SAMSUNGIC500 2013 send RFQ
K4R881869D-FCT9 SAMSUNG 580 2004 send RFQ
K4R881869D-FCT9 SAMSUNG 580 2004 send RFQ
K4S280832I-UC75 SAMSUNG 25000 2007 send RFQ
K4S281632D-TC75 SAMSUNG 6240 2002 send RFQ
K4S281632E-TC75T SAMSUNG 2000 2004 send RFQ
K4S281632E-TC75T SAMSUNG 2000 2004 send RFQ
K4S281632-F-TC75 SAMSUNG 6720 2009 send RFQ
K4S281632F-TC75 SAMSUNG 2000 2007 send RFQ
K4S281632F-TI75 SAMSUNG-, obsolete1069 2007 send RFQ
K4S281632F-TI75 SAMSUNG-, obsolete200 2007 send RFQ
K4S281632F-TI75 SAMSUNG-, obsolete80 2015 send RFQ
K4S281632F-TI75 SAMSUNG-, obsolete80 2015 send RFQ
K4S281632-K-UC75 SAMSUNG 9600 2009 send RFQ
K4S281632O-LI75T00 SAMSUNG 6000 2011 send RFQ
K4S283233F-HN75 SAMSUNG-250 2005 send RFQ
K4S510832B-TC75 SAMSUNG 242 2004 send RFQ
K4S561632B-TC75 SAMSUNG 48 2002 send RFQ
K4S561632E-TI60 SAMSUNG 2000 2010 send RFQ
K4S561632J-UC75 SAMSUNGIC, 54PIN, obsolete100 2012 send RFQ
K4S561632J-UC75 SAMSUNGIC, 54PIN, obsolete57 2012 send RFQ
K4S561632JUI75 SAMSUNG 960 2010 send RFQ
K4S561632JUI75 SAMSUNG 2000 2010 send RFQ
K4S561633FXL75 SAMSUNG 1040 2007 send RFQ
K4S640832F-TC7500 SAMSUNG 4500 2004 send RFQ
K4S641632D-TC80 SAMSUNG 480 2004 send RFQ
K4S641632F-TC75 SAMSUNGIC3700 2005 send RFQ
K4S641632F-TC75 SAMSUNGIC120 2003 send RFQ
K4S641632F-TC75-REV.E SAMSUNG 4000 2003 send RFQ
K4S641632F-TI75 SAMSUNGIC960 2003 send RFQ
K4S641632F-TI75 SAMSUNGIC960 2003 send RFQ
K4S641632F-TI75 SAMSUNGIC9600 2004 send RFQ
K4S641632H-TC75 SAMSUNG-120000 2005 send RFQ
K4S641632H-TC75 SAMSUNG-30000 2005 send RFQ
K4S641632H-TC75 SAMSUNG-20000 2005 send RFQ
K4S641632H-UC60000 SAMSUNG 3072 2007 send RFQ
K4S641632H-UC60000 SAMSUNG 3072 2007 send RFQ
K4S641632H-UC75 SAMSUNGSRAM50000 2005 send RFQ
K4S641632K-UC60T SAMSUNG 1900 2007 send RFQ
K4S641632K-UI75T00 SAMSUNG 2000 2006 send RFQ
K4S641632N-LI75 SAMSUNGIC, obsolete2000 2011 send RFQ
K4S641632N-LI75 SAMSUNGIC, obsolete2000 2011 send RFQ
K4S643232F-TC60 SAMSUNGIC2400 2005 send RFQ
K4S643232F-TC60 SAMSUNGIC2400 2005 send RFQ
K4S643232H-TC50T00 SAMSUNG 2800 2005 send RFQ
K4S643232H-TC60 SAMSUNG 2000 2005 send RFQ
K4S643232H-UC/L70 SAMSUNGSRAM, 4Bank 512Kx32 3V3 TSOP86 143 MHz0 2006 send RFQ
K4S643232H-UC70000 SAMSUNG 576 2006 send RFQ
K4S643232H-UC70000 SAMSUNG 576 2006 send RFQ
K4T1G164QG-BIE6 SAMSUNG-80640 2016 send RFQ
K4T1G164QG-BIE6 SAMSUNG-80640 2016 send RFQ
K4T1G164QG-BIE6 SAMSUNG-10000 2016 send RFQ
K4T1G164QG-BIE6 SAMSUNG-10000 2016 send RFQ
K4T51163QC-ZCD5 SAMSUNG 50 2006 send RFQ
K4T51163QE-ZCE6 SAMSUNG-402 2016 send RFQ
K4T51163QE-ZCE6 SAMSUNG-402 2016 send RFQ
K4T51163QE-ZCE6 SAMSUNG-402 2016 send RFQ
K6E0808C1E-JC12 SAMSUNG 5008 2004 send RFQ
K6E0808C1E-JC12T SAMSUNG 12000 2004 send RFQ
K6E0808C1E-JC12T SAMSUNG 17008 2004 send RFQ
K6E0808C1E-JC12T SAMSUNG 5000 2004 send RFQ
K6E0808C1E-JC12T SAMSUNG 22008 2004 send RFQ
K6E0808C1E-JC15 SAMSUNG 900 2010 send RFQ
K6F1616U6A-EF55 SAMSUNGCapacitor, -1280 2005 send RFQ
K6F1616U6A-EF70 SAMSUNG-, obsolete886 2005 send RFQ
K6F1616U6A-EF70 SAMSUNG-, obsolete886 2005 send RFQ
K6F1616U6A-EF70 SAMSUNG-, obsolete256 2005 send RFQ
K6F1616U6A-EF70 SAMSUNG-, obsolete1447 2005 send RFQ
K6F1616U6C-XF55 SAMSUNGLogic, obsolete12000 2007 send RFQ
K6F1616U6C-XF55 SAMSUNGLogic, obsolete12000 2007 send RFQ
K6F1616U6C-XF55 SAMSUNGLogic, obsolete14000 2007 send RFQ
K6F1616U6C-XF55 SAMSUNGLogic, obsolete1200 2010 send RFQ
K6F2008V2E-YF70 SAMSUNG-5000 2002 send RFQ
K6F2008V2E-YF70 SAMSUNG-164 2002 send RFQ
K6F2008V2E-YF70 SAMSUNG-1875 2002 send RFQ
K6F2008V2E-YF70 SAMSUNG-2039 2002 send RFQ
K6F3216U6M-EF55 SAMSUNGIC, IC,SRAM 2M*16,55nS,55-TBGA, Replacment: IC,SRAM 2M*16,55-TBGA, -, obsolete6000 2014 send RFQ
K6F3216U6M-EF70 SAMSUNG 2000 2014 send RFQ
K6F3216U6M-EF70 SAMSUNG 2000 2014 send RFQ
K6F8016U3A-TF55 SAMSUNG 200 2005 send RFQ
K6F8016U6C-FF55 SAMSUNGMemory, MEM BGA48 R300 2005 send RFQ
K6F8016V3A-TF70 SAMSUNG 790 2005 send RFQ
K6F8016V3M-TF70 SAMSUNGSRAM4000 2005 send RFQ
K6R1016C1C-JC10000 SAMSUNG 100 2001 send RFQ
K6R1016C1D-TI10 SAMSUNG 2000 2007 send RFQ
K6R1016C1D-UI10 SAMSUNGLogic, obsolete38 2011 send RFQ
K6R1016C-JC15T SAMSUNG 300 2000 send RFQ
K6R1016V1DTI-08 SAMSUNG 3000 2006 send RFQ
K6R4004C1D-JC10 SAMSUNG-, obsolete200 2008 send RFQ
K6R4004C1D-JC10 SAMSUNG-, obsolete200 2008 send RFQ
K6R4008C1D-JC10 SAMSUNG-, obsolete784 2018 send RFQ
K6R4008C1D-JC10 SAMSUNG-, obsolete46 2018 send RFQ
K6R4008C1D-JC10 SAMSUNG-, obsolete200 2018 send RFQ
K6R4008C1D-JC10 SAMSUNG-, obsolete200 2018 send RFQ
K6R4008C1D-JI10 SAMSUNGSRAM, 10NS;512Kx8; -40 bis +85, obsolete128 2007 send RFQ
K6R4008C1D-KI10 SAMSUNGSRAM, Integrierter Schaltkreis, SMD, Military, obsolete882 2019 send RFQ
K6R4008C1D-KI10 SAMSUNGSRAM, Integrierter Schaltkreis, SMD, Military, obsolete200 2012 send RFQ
K6R4008C1D-KI10 SAMSUNGSRAM, Integrierter Schaltkreis, SMD, Military, obsolete200 2012 send RFQ
K6R4008C1D-KI10 SAMSUNGSRAM, Integrierter Schaltkreis, SMD, Military, obsolete225 2012 send RFQ
K6R4008C1D-KI10 SAMSUNGSRAM, Integrierter Schaltkreis, SMD, Military, obsolete225 2012 send RFQ
K6R4008V1D-TC10 SAMSUNG-533 2010 send RFQ
K6R4008V1D-UI10 SAMSUNG-, 512Kx8 Bit High Speed Static RAM, 3,3V 8/10ns CMOS200 2011 send RFQ
K6R4008V1D-UI10 SAMSUNG-, 512Kx8 Bit High Speed Static RAM, 3,3V 8/10ns CMOS200 2011 send RFQ
K6R4016C1CJI15 SAMSUNGSRAM, obsolete101 2005 send RFQ
K6R4016C1CTI10 SAMSUNG 98 2007 send RFQ
K6R4016C1D-TC12 SAMSUNG 288 2006 send RFQ
K6R4016C1D-TI10 SAMSUNGMemory, -1000 2008 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete96 2007 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete3000 2007 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete450 2011 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete340 2011 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete340 2011 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete2200 2015 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete2200 2015 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete2163 2015 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete2163 2015 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete137 2017 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete137 2017 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete340 2011 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete240 2013 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete240 2013 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete240 2013 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete2000 2013 send RFQ
K6R4016C1D-UI10 SAMSUNGIC, obsolete240 2013 send RFQ
K6R4016C1DUI-10000 SAMSUNG 1920 2011 send RFQ </